Linearization technology of radio frequency power amplifiers based on Gallium Nitride (GaN)
基于氮化镓（GaN）的射频功率放大器线性化技术

摘要

氮化镓（GaN）射频功率放大器因其高效能、宽频带和高功率输出特性，成为射频领域的重要器件。GaN射频功率放大器在实际应用中常面临非线性失真问题，影响其性能和可靠性。为了解决这一问题，本文研究了GaN射频功率放大器的线性化技术，重点探讨了常用的数字预失真、反馈控制、前馈校正等方法。这些方法有效地改善了放大器的线性度，提升了系统的整体性能和效率。通过与传统技术的比较，本文展示了新型线性化技术在实际应用中的优势和潜力。研究结果为提高GaN射频功率放大器的应用性能提供了理论依据和实践指导。

Abstract

Gallium nitride (GaN)-based radio frequency (RF) power amplifiers have become important devices in the RF field due to their high efficiency, wide bandwidth, and high power output characteristics. In practical applications, GaN RF power amplifiers often face the problem of nonlinear distortion, which affects their performance and reliability. To address this issue, this paper studies the linearization technology of GaN RF power amplifiers and focuses on commonly used methods such as digital predistortion, feedback control, and feedforward correction. These methods effectively improve the linearity of the amplifier and enhance the overall performance and efficiency of the system. By comparing with traditional technologies, this paper demonstrates the advantages and potential of the new linearization technology in practical applications. The research results provide a theoretical basis and practical guidance for improving the application performance of GaN RF power amplifiers.